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Sufficiency conditions for quantum reflectionDOAK, R. B; CHIZMESHYA, A. V. G.Europhysics letters (Print). 2000, Vol 51, Num 4, pp 381-387, issn 0295-5075Article

Experimental and theoretical study of deviations from Vegard's Law in the SnxGe1-x systemCHIZMESHYA, A. V. G; BAUER, M. R; KOUVETAKIS, J et al.Chemistry of materials. 2003, Vol 15, Num 13, pp 2511-2519, issn 0897-4756, 9 p.Article

SrTiO3-SrGeO3 perovskites obtained at high pressure and high temperatureGRZECHNIK, A; MCMILLAN, P. F; CHAMBERLIN, R et al.European journal of solid state and inorganic chemistry. 1997, Vol 34, Num 3, pp 269-281, issn 0992-4361Article

Density functional theory study of the decomposition of Mg(OH)2: a lamellar dehydroxylation modelCHIZMESHYA, A. V. G; MCKELVY, M. J; SHARMA, R et al.Materials chemistry and physics. 2003, Vol 77, Num 2, pp 416-425, issn 0254-0584, 10 p.Article

Epitaxial film growth of zirconium diboride on Si(001)ROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 364-371, issn 0022-0248, 8 p.Article

An experimental and theoretical investigation of phonons and lattice instabilities in metastable decompressed SrGeO3 perovskiteGRZECHNIK, A; CHIZMESHYA, A. V. G; WOLF, G. H et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 1, pp 221-233, issn 0953-8984Article

Designer hydride routes to 'Si-Ge'/(Gd,Er)2O3/Si(111) semiconductor-on-insulator heterostructuresWATKINS, Tylan; LIYING JIANG; SMITH, D. J et al.Semiconductor science and technology. 2011, Vol 26, Num 12, issn 0268-1242, 125005.1-125005.9Article

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layersYAMADA-TAKAMURA, Yukiko; WANG, Z. T; FUJIKAWA, Y et al.Physical review letters. 2005, Vol 95, Num 26, pp 266105.1-266105.4, issn 0031-9007Article

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlNROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Applied surface science. 2003, Vol 212-13, pp 872-878, issn 0169-4332, 7 p.Conference Paper

Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(111) substratesROUCKA, R; AN, Y.-J; CHIZMESHYA, A. V. G et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1687-1690, issn 0038-1101, 4 p.Article

Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applicationsBEELER, Richard; MATHEWS, Jay; CHANGE WENG et al.Solar energy materials and solar cells. 2010, Vol 94, Num 12, pp 2362-2370, issn 0927-0248, 9 p.Article

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)HU, C.-W; CHIZMESHYA, A. V. G; TOLLE, J et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 554-563, issn 0022-0248, 10 p.Article

Bonding trends in (NSF)3 at high-pressuresCHIZMESHYA, A. V. G; COFFMAN, P; ROBINSON, S et al.European journal of solid state and inorganic chemistry. 1997, Vol 34, Num 7-8, pp 715-731, issn 0992-4361Article

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